MBR835 データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

MBR835

SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES

ON Semiconductor 

MBR835, MBR840, MBR845

THERMAL CHARACTERISTICS

Characteristic

Symbol

Thermal Resistance − Junction−to−Lead

(See Note 2 − Mounting Data)

Thermal Resistance − Junction−to−Ambient

(See Note 2 − Mounting Data)

RθJL

RθJA

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Characteristic

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 8.0 Amps, TL = 25°C)

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)

TL = 25°C

TL = 100°C

1. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.

0.9 in x 0.9 in

Copper Pad Size

13

50

6.75 in x 6.75 in

Copper Pad Size

12

40

Symbol

vF

iR

Max

0.55

1.0

50

Unit

°C/W

Unit

V

mA

30

30

10

10

1

125°C

100°C

75°C

25°C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

VF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

MBR845

1

100°C

125°C

75°C

25°C

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

VF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 2. Maximum Forward Voltage

1E−01

1E−02

1E−03

1E−04

1E−05

125°C

100°C

75°C

25°C

10,000

1000

1E−06

0

5 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current

100

0.1

f = 1 MHz

TJ = 25°C

1

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Typical Capacitance

http://onsemi.com

2

Share Link: