MBRB20200CT データシートの表示（PDF） - ON Semiconductor

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MBRB20200CT

SWITCHMODE™ Power Rectifier Dual Schottky Rectifier

ON Semiconductor 

MBRB20200CT

THERMAL CHARACTERISTICS (Per Leg)

Characteristic

Thermal Resistance, Junction−to−Case

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic

Maximum Instantaneous Forward Voltage (Note 1)

(IF = 10 A, TC = 25°C)

(IF = 10 A, TC = 125°C)

(IF = 20 A, TC = 25°C)

(IF = 20 A, TC = 125°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TC = 25°C)

(Rated dc Voltage, TC = 125°C)

DYNAMIC CHARACTERISTICS (Per Leg)

Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Symbol

RqJC

Symbol

VF

IR

CT

Value

2.0

Value

0.9

0.8

1.0

0.9

1.0

50

500

Unit

°C/W

Unit

V

mA

pF

ORDERING INFORMATION

Device

Package

Shipping†

MBRB20200CT

D2PAK

50 Units / Rail

MBRB20200CTG

D2PAK

(Pb−Free)

50 Units / Rail

MBRB20200CTT4

D2PAK

800 Units / Tape & Reel

MBRB20200CTT4G

D2PAK

(Pb−Free)

800 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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