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MBRB745 データシートの表示(PDF) - General Semiconductor

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MBRB745
GE
General Semiconductor GE
MBRB745 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES MBRB735 THRU MBRB760
FIG. 1 - FORWARD CURRENT DERATING CURVE
10
RESISTIVE OR INDUCTIVE LOAD
8
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
175
TJ=TJ max.
150
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
6
4
2
MBR735 - MBR745
MBR750 & MBR760
0
0
50
100
CASE TEMPERATURE, °C
150
125
100
75
50
25
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
TJ=125°C
10
PULSE WIDTH = 300µs
TJ=25°C
1
MBRB735 - MBRB745
MBRB750 & MBBR760
0.1
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
50
MBRB735 - MBRB745
MBRB750 & MBBR760
10
1
TJ=125°C
0.1
0.01
TJ=75°C
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.001
0
TJ=25°C
20
40
60
80 100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
4,000
1,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
100
40
0.1
MBRB735 - MBRB745
MBRB750 & MBBR760
1
10
REVERSE VOLTAGE, VOLTS
100
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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