MC-4532DA726EFB-A10 データシートの表示（PDF） - Elpida Memory, Inc

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MC-4532DA726EFB-A10

32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

Elpida Memory, Inc 

MC-4532DA726

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

EVoltage on power supply pin relative to GND

Voltage on input pin relative to GND

Short circuit output current

Power dissipation

OOperating ambient temperature

Storage temperature

Symbol

VCC

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

21

W

0 to 70

°C

–55 to +125

°C

L Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

P Parameter

Supply voltage

High level input voltage

r Low level input voltage

Operating ambient temperature

Symbol

VCC

VIH

VIL

TA

Condition

MIN.

3.0

2.0

–0.3

0

TYP. MAX. Unit

3.3

3.6

V

VCC + 0.3 V

+0.8

V

70

°C

o Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Symbol

Test condition

d Input capacitance

CI1 A0 – A11, BA0 (A13), BA1 (A12),

/RAS, /CAS, /WE

CI2

CLK0

CI3

CKE0

u CI4 /CS0, /CS2

CI5 DQMB0 - DQMB7

ct Data input/output capacitance

CI/O DQ0 - DQ63, CB0 - CB7

MIN. TYP. MAX. Unit

4

10

pF

15

25

7

20

4

10

3

10

5

13

pF

Data Sheet E0072N10

5

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