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MC100E175FNR2 データシートの表示(PDF) - ON Semiconductor

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MC100E175FNR2
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100E175FNR2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10E175, MC100E175
Table 8. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 9)
0°C
25°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min
fMAX
tPLH
tPHL
Maximum Toggle Frequency
Propagation Delay to Output
700 1100
700 1100
700
D to Q 550 800 975 550 800 975 550
D to ODDPAR 950 1400 1600 950 1400 1600 950
LEN to Q 525 800 975 525 800 975 525
LEN to ODDPAR 525 800 975 525 800 975 525
MR to Q(tPHL) 525 800 975 525 800 975 525
MR to ODDPAR(tPHL) 525 800 975 525 800 975 525
ts
Setup Time
D (Q) 275 100
275
275
D (ODDPAR) 900 700
900
900
th
Hold Time
D (Q) 175 −100
175
175
D (ODDPAR) − 300 − 70
− 300
− 300
tRR
Reset Recovery Time
850 600
850 600
850
tSKEW Within-Device Skew (Note 10)
LEN, MR
75
75
D to Q
75
75
D to ODDPAR
200
200
tJITTER
tr
tf
Random Clock Jitter (RMS)
Rise/Fall Times
(20 - 80%)
<1
<1
300 500 800 300 500 800 300
85°C
Typ
1100
800
1400
800
800
800
800
600
75
75
200
<1
500
Max
975
1600
975
975
975
975
Unit
MHz
ps
ps
ps
ps
ps
ps
ps
800
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: VEE can vary −0.46 V / −0.06 V.
100 Series: VEE can vary −0.46 V / −0.8 V.
10. Within-device skew is defined as identical transitions on similar paths through a device.
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