P4C174-12JC データシートの表示（PDF） - Performance Semiconductor
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P4C174-12JC Datasheet PDF : 10 Pages
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P4C174
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
I
Dynamic Operating Current* Commercial
CC
–8 –10 –12 –15 –20 –25 Unit
200 180 170 160 155 150 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
DATA RETENTION CHARACTERISTICS (P4C174 Military Temperature Only)
Symbol
Parameter
VDR
VCC for Data Retention
Test Conditons
Typ.*
Max
Min
VCC =
VCC =
Unit
2.0V 3.0V 2.0V 3.0V
2.0
V
ICCDR Data Retention Current
tCDR
Chip Deselect to
Data Retention Time
tR†
Operation Recovery Time
*TA = +25˙C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V
or VIN ≤ 0.2V
10
0
tRC§
15 600 900 µA
ns
ns
READ CYCLE NO. 1 (OE CONTROLLED)(2,3)
ADDRESS
OE
CE
t AA
t OE
(1)
t OLZ
tRC(4)
t OH
DATA OUT
t AC
(1)
t LZ
tOHZ(1)
tHZ(1)
101
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