MC33153D データシートの表示（PDF） - ON Semiconductor

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MC33153D

Single IGBT Gate Driver

ON Semiconductor 

MC33153

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Supply Voltage

Logic Input

VCC to VEE

Kelvin Ground to VEE (Note 1)

Current Sense Input

Blanking/Desaturation Input

Gate Drive Output

Source Current

Sink Current

Diode Clamp Current

VCC − VEE

20

V

KGND − VEE

Vin

VEE −0.3 to VCC

V

VS

−0.3 to VCC

V

VBD

−0.3 to VCC

V

IO

A

1.0

2.0

1.0

Fault Output

Source Current

Sink Current

IFO

mA

25

10

Power Dissipation and Thermal Characteristics

D Suffix SO−8 Package, Case 751

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

P Suffix DIP−8 Package, Case 626

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

PD

RqJA

PD

RqJA

0.56

W

180

°C/W

1.0

W

100

°C/W

Operating Junction Temperature

TJ

+150

°C

Operating Ambient Temperature

TA

−40 to +105

°C

Storage Temperature Range

Tstg

−65 to +150

°C

NOTE: ESD data available upon request.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Kelvin Ground must always be between VEE and VCC.

ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C,

for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

LOGIC INPUT

Input Threshold Voltage

High State (Logic 1)

Low State (Logic 0)

VIH

−

2.70

3.2

VIL

1.2

2.30

−

Input Current

High State (VIH = 3.0 V)

Low State (VIL = 1.2 V)

IIH

−

130

500

IIL

−

50

100

DRIVE OUTPUT

Output Voltage

Low State (ISink = 1.0 A)

High State (ISource = 500 mA)

VOL

VOH

−

2.0

2.5

12

13.9

−

Output Pull−Down Resistor

RPD

−

100

200

FAULT OUTPUT

Output Voltage

Low State (ISink = 5.0 mA)

High State (ISource = 20 mA)

VFL

−

0.2

1.0

VFH

12

13.3

−

SWITCHING CHARACTERISTICS

Propagation Delay (50% Input to 50% Output CL = 1.0 nF)

Logic Input to Drive Output Rise

Logic Input to Drive Output Fall

tPLH(in/out)

−

80

300

tPHL (in/out)

−

120

300

Drive Output Rise Time (10% to 90%) CL = 1.0 nF

Drive Output Fall Time (90% to 10%) CL = 1.0 nF

tr

−

17

55

tf

−

17

55

Propagation Delay

Current Sense Input to Drive Output

Fault Blanking/Desaturation Input to Drive Output

tP(OC)

tP(FLT)

−

0.3

1.0

2. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

Tlow = −40°C for MC33153 Thigh = +105°C for MC33153

Unit

V

mA

V

kW

V

ns

ns

ns

ms

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