MC74LVX157DTR2G(2011) データシートの表示（PDF） - ON Semiconductor
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MC74LVX157DTR2G Datasheet PDF : 7 Pages
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MC74LVX157
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
TA = − 40 to 85°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
tPHL
Propagation Delay, Input to
Output
VCC = 2.7V
CL = 15pF −
6.6 12.5
1.0
CL = 50pF −
9.1 16.0
1.0
15.5
ns
19.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC =3.3±0.3V CL =15pF −
5.1 7.9
1.0
9.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CL=50pF −
7.6 11.4
1.0
13.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
tPHL
Propagation Delay, S to Zn
VCC = 2.7V
CL = 15pF −
8.9 16.9
1.0
CL = 50pF −
11.4 20.4
1.0
20.5
ns
24.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC =3.3±0.3V CL =15pF −
7.0 11.0
1.0
13.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CL=50pF −
9.5 14.5
1.0
16.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Propagation Delay, E to Zn
VCC = 2.7V
CL = 15pF −
9.1 17.6
1.0
CL = 50pF −
11.6 21.1
1.0
20.5
ns
24.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC =3.3±0.3V CL =15pF −
7.2 11.5
1.0
13.5
CL = 50pF −
9.7 15.0
1.0
17.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tOSHL Output−to−Output Skew (Note 1) VCC = 2.7V
CL = 50pF −
−
1.5
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tOSLH
VCC = 3.3 ±0.3V CL = 50pF −
−
1.5
−
1.5
ns
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CAPACITIVE CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin InputCapacitance
Parameter
TA = 25°C
TA = − 40 to 85°C
Min Typ Max
Min
Max
Unit
−
4
10
−
10
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CPD Power Dissipation Capacitance (Note 2)
−
20
−
−
−
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per bit). CPD is used to determine the no−load
dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 3.3V, Measured in SOIC Package)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP Quiet Output Maximum Dynamic VOL
0.3
0.5
V
VOLV Quiet Output Minimum Dynamic VOL
−0.3
−0.5
V
VIHD Minimum High Level Dynamic Input Voltage
−
2.0
V
VILD Maximum Low Level Dynamic Input Voltage
−
0.8
V
In or S
50%
tPLH
Zn
50% VCC
Figure 3.
VCC
GND
tPHL
E
tPHL
Zn
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
50%
50% VCC
Figure 4.
VCC
GND
tPLH
*Includes all probe and jig capacitance
Figure 5. Propagation Delay Test Circuit
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