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MC79076R2 データシートの表示(PDF) - Freescale Semiconductor

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MC79076R2
Freescale
Freescale Semiconductor Freescale
MC79076R2 Datasheet PDF : 13 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V VCC 18 V, -40°C TA 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INPUTS
Advance Input Resistance
(VCC = 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST =
Bypass = 0 V)
Advance Voltage (7)
VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V
Advance Threshold Voltage (7)
(VCC = 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,)
Dwell = Reference = RPM Detect = open,
Dwell Control = sinking 10 µA)
Increasing
Decreasing
Hysteresis
Bypass Input Resistance
(VCC = 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V)
Bypass Voltage
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V)
Bypass Threshold Voltage (8)
(Ref/Dwell = Advance = 1.0 V, EST = 3.0 V)
Increasing
Decreasing
Hysteresis
Current Sense Threshold Voltage (9)
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V)
EST Input Resistance
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
EST Input Voltage (EST Mode)
(VCC = 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
R(A)
VTH(A)
k
15
18
25
V
-
0.05
0.1
V
VTH+(A)
VTH-(A)
VHYS(A)
VB + 0.103 VB + 0.114 VB + 0.130
VB + 0.045 VB + 0.068
-
0.018
0.045
-
R(BP)
6.0
9.2
16
k
V(BP)
-
0.065
0.1
V
V
VTH+(BP)
VTH-(BP)
VHYS(BP)
VB + 1.6
VB + 0.9
0.65
VB + 0.188
VB + 0.103
0.86
VB + 2.1
-
-
VTH(CS)
mV
90
105
121
R(EST)
k
7.0
10.3
18
V(EST)
0.1
V
-
0.07
Notes
7. Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive
(or negative) going transition 2.0 V respectively. It is expressed as VTH±(A) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
8. Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or
negative) going transition 1.5 V respectively. It is expressed as VTH±(BP) = VB + VX where VB is the Bias Voltage and VX is the additional
voltage necessary to attain the threshold.
9. Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load.
Analog Integrated Circuit Device Data
Freescale Semiconductor
79076
5

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