MCM63P819KZP150R データシートの表示（PDF） - Motorola => Freescale

部品番号

コンポーネント説明

メーカー

MCM63P819KZP150R

128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

Motorola => Freescale 

Freescale Semiconductor, Inc.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V +10%, –5%, TA = 0° to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS (Voltages Referenced to VSS = 0 V)

Parameter

Symbol

Min

Typ

Max

Unit

2.5 V I/O SUPPLY

Supply Voltage

VDD

3.135

3.3

3.465

V

I/O Supply Voltage

Input Low Voltage

Input High Voltage

VDDQ

VIL

VIH

2.375

–0.3*

1.7

2.5

2.9

V

—

0.7

V

—

VDD + 0.3**

V

Input High Voltage I/O Pins

Output Low Voltage (IOL = 2 mA)

VIH2

1.7

—

VDDQ + 0.3**

V

VOL

—

—

0.7

V

Output High Voltage (IOH = –2 mA)

3.3 V I/O SUPPLY

VOH

1.7

—

—

V

Supply Voltage

VDD

3.135

3.3

3.465

V

I/O Supply Voltage

Input Low Voltage

Input High Voltage

VDDQ

VIL

VIH

3.135

–0.5*

2

3.3

VDD

V

—

0.8

V

—

VDD + 0.5***

V

Input High Voltage I/O Pins

VIH2

2

Output Low Voltage (IOL = 8 mA)

VOL

—

Output High Voltage (IOH = –4 mA)

VOH

2.4

* Undershoot: VIL > –1.0 V for t < 20% tKHKH.

** Overshoot: VIH/VIH2 < VDD/VDDQ + 1.0 V (not to exceed 3.6 V) for t < 20% tKHKH.

*** Overshoot: VIH/VIH2 < VDD/VDDQ + 1.0 V (not to exceed 4.6 V) for t < 20% tKHKH.

—

VDDQ + 0.5***

V

—

0.4

V

—

—

V

SUPPLY CURRENTS

Parameter

Symbol

Min

Typ

Max

Unit Notes

Input Leakage Current (0 V ≤ Vin ≤ VDD)

Ilkg(I)

—

Output Leakage Current (0 V ≤ Vin ≤ VDDQ)

Ilkg(O)

—

AC Supply Current (Device Selected, MCM63P737K / 819K–166 IDDA

—

All Outputs Open, Freq = Max)

MCM63P737K / 819K–150

Includes VDD Only

MCM63P737K / 819K–133

CMOS Standby Supply Current (Device Deselected, Freq = 0,

ISB2

—

VDD = Max, All Inputs Static at CMOS Levels)

—

±1

µA

1

—

±1

µA

—

500/430 mA 2, 3, 4

470/400

450/380

—

30

mA

5, 6

Sleep Mode Supply Current (Device Deselected, Freq = Max,

VDD = Max, All Other Inputs Static at CMOS Levels,

ZZ ≥ VDD – 0.2 V)

IZZ

—

TTL Standby Supply Current (Device Deselected, Freq = 0,

VDD = Max, All Inputs Static at TTL Levels)

ISB3

—

Clock Running (Device Deselected, MCM63P737K / 819K–166 ISB4

—

Freq = Max, VDD = Max, All Inputs MCM63P737K / 819K–150

Toggling at CMOS Levels)

MCM63P737K / 819K–133

—

15

mA 1, 5, 6

—

35

mA

5, 7

—

185/170

mA

5, 6

175/160

160/145

Static Clock Running

(Device Deselected,

MCM63P737K / 819K–166 ISB5

—

MCM63P737K / 819K–150

Freq = Max,VDD = Max, All Inputs

Static at TTL Levels)

MCM63P737K / 819K–133

—

75/65

mA

5, 7

70/60

65/55

NOTES:

1. LBO and ZZ pins have an internal pull–up and pull–down, respectively; and will exhibit leakage currents of ±5 µA.

2. Reference AC Operating Conditions and Characteristics for input and timing.

3. All addresses transition simultaneously low (LSB) then high (MSB).

4. Data states are all zero.

5. Device is deselected as defined by the Truth Table.

6. CMOS levels for I/Os are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.

7. TTL levels for I/Os are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.

MOTOROLA FAST SRAM

For More Information On This Product, MCM63P737K•MCM63P819K

Go to: www.freescale.com

11

Share Link: