MCP73827-4.2 データシートの表示（PDF） - Microchip Technology

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MCP73827-4.2

Single Cell Lithium-Ion Charge Management Controller with Mode Indicator and Charge Current Monitor

Microchip Technology 

MCP73827

1.0 ELECTRICAL

CHARACTERISTICS

1.1 Maximum Ratings*

VIN...................................................................... -0.3V to 6.0V

All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V

Current at MODE Pin .............................................. +/-30 mA

Current at VDRV.......................................................... +/-1 mA

Maximum Junction Temperature, TJ.............................. 150°C

Storage temperature .....................................-65°C to +150°C

ESD protection on all pins ..................................................≥ 4 kV

*Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification

is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

PIN FUNCTION TABLE

Pin

Name

Description

1

SHDN Logic Shutdown

2

GND Battery Management

0V Reference

3

MODE Charge Status Output

4

IMON Charge Current Monitor

5

VBAT Cell Voltage Monitor Input

6

VDRV Drive Output

7

VSNS Charge Current Sense Input

8

VIN

Battery Management

Input Supply

DC CHARACTERISTICS: MCP73827-4.1, MCP73827-4.2

Unless otherwise specified, all limits apply for VIN = [VREG(typ)+1V], RSENSE = 500 mΩ, TA = -20°C to +85°C.

Typical values are at +25°C. Refer to Figure 1-1 for test circuit.

Parameter

Sym

Min

Typ

Max

Units

Conditions

Supply Voltage

Supply Current

VIN

4.5

—

5.5

V

IIN

—

0.5

15

µA Shutdown, VSHDN = 0V

—

250

560

Constant Voltage Mode

Voltage Regulation (Constant Voltage Mode)

Regulated Output Voltage

VREG

4.059

4.1

4.141

4.158

4.2

4.242

V

MCP73827-4.1 only

V

MCP73827-4.2 only

Line Regulation

Load Regulation

Output Reverse Leakage Current

External MOSFET Gate Drive

ΔVBAT

-10

—

10

ΔVBAT

-1

+0.1

1

ILK

—

8

—

mV VIN = 4.5V to 5.5V,

IOUT = 75 mA

mV IOUT=10 mA to 75 mA

µA

VIN=Floating, VBAT=VREG

Gate Drive Current

IDRV

—

—

1

mA Sink, CV Mode

0.08

—

—

mA Source, CV Mode

Gate Drive Minimum Voltage

VDRV

—

1.6

—

V

Current Regulation (Controlled Current Mode)

Current Sense Gain

Current Limit Threshold

Foldback Current Scale Factor

ACS

—

100

—

dB

Δ(VSNS-VDRV) / ΔVBAT

VCS

40

53

75

mV (VIN-VSNS) at IOUT

K

—

0.43

—

A/A

Charge Status Indicator - MODE

Threshold Voltage

Low Output Voltage

Leakage Current

Shutdown Input - SHDN

VTH

—

VREG

—

V

VOL

—

—

400

mV ISINK = 10 mA

ILK

—

—

1

µA

ISINK=0 mA, VMODE=5.5V

Input High Voltage Level

Input Low Voltage Level

Input Leakage Current

Charge Current Monitor - IMON

Charge Current Monitor Gain

VIH

40

—

—

%VIN

VIL

—

—

25

%VIN

ILK

—

—

1

µA

VSHDN=0V to 5.5V

AIMON

—

26

—

V/V ΔVIMON / Δ(VIN-VSNS)

© 2007 Microchip Technology Inc.

DS21704B-page 3

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