MCP73844-840I データシートの表示（PDF） - Microchip Technology

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MCP73844-840I

Advanced Single or Dual Cell Lithium-Ion/Lithium-Polymer Charge Management Controllers

Microchip Technology 

MCP73841/2/3/4

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.

Typical values are at +25°C, VDD = [VREG(Typ) + 1V].

Parameters

Sym

Min

Typ

Max

Units

Conditions

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)

Precondition Current

Regulation Threshold

VPCS

5

10

15

mV

Precondition Threshold Voltage

MCP73841-4.1,

MCP73843-4.1

VPTH

2.70 2.80 2.90

V

MCP73841-4.2,

MCP73843-4.2

2.75 2.85 2.95

V

MCP73842-8.2,

MCP73844-8.2

5.40 5.60 5.80

V

MCP73842-8.4,

MCP73844-8.4

5.50 5.70 5.90

V

Charge Termination

Charge Termination Threshold

VTCS

4

7

10

mV

Automatic Recharge

Recharge Threshold Voltage

MCP73841,

MCP73843

VRTH

VREG- VREG- VREG-

300 mV 200 mV 100 mV

MCP73842,

MCP73844

VREG- VREG- VREG-

600 mV 400 mV 200 mV

External MOSFET Gate Drive

Gate Drive Current

IDRV

–

2

–

–

-0.5

–

Gate Drive Minimum Voltage

VDRVMIN

–

–

1.0

Gate - Source Clamp Voltage

VGS

-7.0

–

-4.5

Thermistor Reference - MCP73841, MCP73842

Thermistor Reference Output

Voltage

VTHREF

2.475 2.55 2.625

Temperature Coefficient

Thermistor Reference Source

Current

TCTHREF

–

+50

–

ITHREF

200

–

–

Thermistor Reference Line

Regulation

|(∆VTHREF/

–

VTHREF)|/

∆VDD

Thermistor Reference Load

Regulation

∆VTHREF/

–

VTHREF

Thermistor Comparator - MCP73841, MCP73842

0.1

0.25

0.01 0.10

Upper Trip Threshold

Upper Trip Point Hysteresis

Lower Trip Threshold

Lower Trip Point Hysteresis

Input Bias Current

Status Indicator

VT1

VT1HYS

VT2

VT2HYS

|IBIAS|

1.18 1.25 1.32

–

-50

–

0.59 0.62 0.66

–

80

–

–

–

2

Sink Current

Low Output Voltage

Input Leakage Current

ISINK

VOL

ILK

4

7

12

–

200

400

–

0.01

1

V

V

mA

mA

V

V

V

ppm/°C

µA

%/V

%

V

mV

V

mV

µA

mA

mV

µA

VDD – VSENSE,

TA = -5°C to +55°C

VBAT Low-to-High

VBAT Low-to-High

VBAT Low-to-High

VBAT Low-to-High

VDD – VSENSE,

TA = -5°C to +55°C

VBAT High-to-Low

VBAT High-to-Low

Sink, CV Mode

Source, CV Mode

VDD = 4.5V

VDD = 12.0V

TA = +25°C, VDD = VREG(Typ)+1V,

ITHREF = 0 mA

VDD=[VREG(Typ)+1V] to 12V

ITHREF = 0 mA to 0.20 mA

ISINK = 1 mA

ISINK = 0 mA, VSTAT1 = 12V

DS21823B-page 4

 2004 Microchip Technology Inc.

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