MCR100(2005) データシートの表示（PDF） - ON Semiconductor
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MCR100 Datasheet PDF : 6 Pages
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MCR100 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
http://onsemi.com
SCRs
0.8 A RMS
100 thru 600 V
G
A
K
MARKING
DIAGRAM
1
23
TO−92 (TO−226)
CASE 029
STYLE 10
MCR
100−x
AYWW
x
= Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
January, 2005 − Rev. 6
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR100/D
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