MCR12DCM データシートの表示（PDF） - ON Semiconductor
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MCR12DCM
ON Semiconductor
MCR12DCM Datasheet PDF : 5 Pages
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MCR12DCM, MCR12DCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
RqJC
RqJA
RqJA
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak Forward On−State Voltage (Note 4) (ITM = 20 A)
VTM
Gate Trigger Current (Continuous dc)
IGT
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = *40°C
Gate Trigger Voltage (Continuous dc)
VGT
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = *40°C
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W)
VGD
TJ = 125°C
Holding Current
IH
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C
TJ = −40°C
Latching Current
IL
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = −40°C)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
Max
Unit
2.2
°C/W
88
80
260
°C
Min Typ Max Unit
mA
−
− 0.01
−
−
5.0
−
1.3 1.9
V
mA
2.0 7.0 20
−
−
40
V
0.5 0.65 1.0
−
−
2.0
0.2
−
−
V
mA
4.0
22
40
−
−
80
mA
4.0
22
40
−
−
80
V/ms
50 200
−
ORDERING INFORMATION
Device
Package
Shipping†
MCR12DCMT4
DPAK
2500 / Tape and Reel
MCR12DCMT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
MCR12DCNT4
DPAK
2500 / Tape and Reel
MCR12DCNT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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