MCT210M(2008) データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
MCT210M Datasheet PDF : 11 Pages
| |||
Electrical Characteristics (TA = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
EMITTER
VF Input Forward Voltage IF = 20mA
MCT2M
MCT2EM
MCT271M
IR
Reverse Leakage
Current
TA = 0°C–70°C, IF = 40mA
VR = 3.0V
MCT210M
MCT2M
MCT2EM
MCT271M
DETECTOR
TA = 0°C–70°C, VR = 6.0V MCT210M
BVCEO Collector-Emitter
Breakdown Voltage
BVCBO Collector-Base
Breakdown Voltage
IC = 1.0mA, IF = 0
TA = 0°C–70°C
IC = 10µA, IF = 0
ALL
MCT210M
MCT2M
MCT2EM
MCT271M
BVECO Emitter-Collector
Breakdown Voltage
TA = 0°C–70°C
IE = 100µA, IF = 0
MCT210M
MCT2M
MCT2EM
MCT271M
ICEO
ICBO
Collector-Emitter Dark
Current
Collector-Base Dark
Current
TA = 0°C–70°C
VCE = 10V, IF = 0
VCE = 5V, TA = 0°C–70°C
VCB = 10V, IF = 0
MCT210M
ALL
ALL
CCE Capacitance
VCE = 0V, f = 1MHz
ALL
Min.
30
70
30
7
6
Typ.*
1.25
1.33
0.001
100
120
10
10
1
8
Max. Units
1.50
V
10
µA
V
V
V
50
nA
30
µA
20
nA
pF
*All typical TA = 25°C
Isolation Characteristics
Symbol
Parameter
VISO
RISO
CISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
*All typicals at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
Min
7500
1011
Typ*
0.2
Max
2
Units
Vac(pk)
Ω
pF
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.0
3
www.fairchildsemi.com
Share Link: 