MCT9001SD(2004) データシートの表示（PDF） - Fairchild Semiconductor
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MCT9001SD Datasheet PDF : 8 Pages
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DUAL PHOTOTRANSISTOR
OPTOCOUPLERS
MCT9001
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Current
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Test Conditions Symbol
Min
(IF = 10 mA)
VF
(VR = 5 V)
IR
(VF = 0 V, f = 1 MHz)
CJ
(IC = 0.5 mA, IF = 0) BVCEO
55
(IE = 100 µA, IF = 0) BVECO
7
(VCE = 24 V, IF = 0)
(VCE = 24 V, TA = 85°C)
ICEO
(VCE = 0 V, f = 1 MHz) CCE
Typ**
1.0
50
5
8
Max
1.3
10
100
50
Unit
V
µA
pF
V
V
nA
µA
pF
TRANSFER CHARACTERISTICS
AC Characteristic
SWITCHING TIMES
Non-Saturated
Turn-on Time
Turn-off Time
Rise Time
Fall Time
Saturated
Turn-on Time
Turn-off Time
Test Conditions Symbol Min
Typ**
Max
Units
ton
3
(RL = 100 Ω, IC = 2 mA, VCC = 10 V)
toff
tr
3
2.4
µs
tf
2.4
(IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V)
ton
toff
2.4
25.0
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min
Current Transfer Ratio, Collector-Emitter
(IF = 5 mA, VCE = 5 V)
CTR
50
(IF = 8 mA, VCE = 0.4 V) CTR(sat)
30
Saturation Voltage
(IF = 8 mA, IC = 2.4 mA) VCE(sat)
Typ**
Max
600
0.40
Units
%
V
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(II-O ≤ 1 µA, t = 1 min.)
(VI-O = 500 VDC)
(f = 1 MHz)
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ**
0.5
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 2 of 8
10/20/04
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