MDS150 データシートの表示（PDF） - Microsemi Corporation

部品番号

コンポーネント説明

メーカー

MDS150

150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz

Microsemi Corporation 

MDS150

150 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION

The MDS150 is a high power COMMON BASE bipolar transistor. It is

designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The

transistor includes double input prematch and output prematch for broadband

performance. The device has gold thin-film metallization and diffused

ballasting in a hermetically sealed package for proven highest MTTF.

CASE OUTLINE

55AW Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25C1

350 W

Maximum Voltage and Current

Collector to Emitter Voltage (BVces)

Emitter to Base Voltage (BVebo)

Peak Collector Current (Ic)

55 V

3.5 V

10 A

Maximum Temperatures

Storage Temperature

-65 to +150 C

Operating Junction Temperature

+200 C

ELECTRICAL CHARACTERISTICS @ 25C

SYMBOL

Pout

Pin

Pg

c

VSWR

Pd1

Trise1

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

Pulse Droop

Rise Time

TEST CONDITIONS

F = 1030, 1090 MHz

Vcc = 50 Volts

PW = Note 2

DF = Note 2

FUNCTIONAL CHARACTERISTICS @ 25C

BVebo

BVces

BVcbo

hFE

jc1

Emitter to Base Breakdown

Collector to Emitter Breakdown

Collector to Base Breakdown

DC – Current Gain

Thermal Resistance

Ie = 10 mA

Ic = 30 mA

Ic = 30 mA

Vce = 5V, Ic = 1 A

NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS

NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 128, repeated every 6.4mS

REV B: MAY 2010

MIN

150

8.75

40

TYP

MAX

20

3:1

0.5

100

UNITS

W

W

dB

%

dB

nSec

3.5

V

55

V

55

V

10

0.5 C/W

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

Share Link: