MGF0904 データシートの表示（PDF） - Mitsumi

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MGF0904

High-power GaAs FET (small signal gain stage) L & S BAND / 0.6W

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MGF0904A

L & S BAND / 0.6W

non - matched

DESCRIPTION

The MGF0904A, GaAs FET with an N-channel schottky

gate, is designed for use in UHF band amplifiers.

FEATURES

 High output power

Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm

 High power gain

Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm

 High power added efficiency

P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBm

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

OUTLINE DRAWING

Unit : m illim eters

①

②

φ2.2

②

0.6±0.2

③

RECOMMENDED BIAS CONDITIONS

 Vds=8V  Ids=200mA  Rg=500 Refer to Bias Procedure

Absolute maximum ratings

Symbol

Parameter

VGDO Gate to drain voltage

VGSO Gate to source voltage

ID

Drain current

IGR Reverse gate current

IGF Forward gate current

PT*1 Total power dissipation

Tch Cannel temperature

Tstg Storage temperature

*1:Tc=25C

(Ta=25C)

Ratings

-17

-17

800

-2.5

5.4

3.75

175

-65 to +175

Unit

V

V

mA

mA

mA

W

C

C

Electrical characteristics (Ta=25C)

Symbol

Parameter

Test conditions

IDSS

Saturated drain current

gm

Transconductance

VGS(off) Gate to source cut-off voltage

Po

Output power

P.A.E.

Power added efficiency

Rth(ch-c) *2 Thermal resistance

Rth(ch-a) *3 Thermal resistance

*2 :Channel-case

*3 :Channel-ambient

VDS=3V,VGS=0V

VDS=3V,ID=300mA

VDS=3V,ID=2.5mA

VDS=8V,ID(RF off)=200mA

f=1.65GHz,Pin=15dBm

ΔVf method

ΔVf method

GF-7

5.0

9.0±0.2

14.0

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Min.

400

120

-1

26

-

-

-

Limits

Typ.

550

200

-3

28

40

-

-

Max.

800

-

-5

-

-

40

100

Unit

mA

mS

V

dBm

%

C/W

C/W

Publication Date : Apr., 2011

1

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