MHVIC915 データシートの表示（PDF） - Motorola => Freescale
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MHVIC915
Motorola => Freescale
MHVIC915 Datasheet PDF : 12 Pages
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Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(Pout = 0.2 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
Output Application
(Pout = 2.5 W CW)
Stage 1, 27 Vdc, IDQ = 80 mA
Stage 2, 27 Vdc, IDQ = 120 mA
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 50 mA
Stage 2, 26 Vdc, IDQ = 140 mA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Symbol
VDSS
VGS
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
–65 to +150
150
Max
5.07
3.73
3.41
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
Class
1 (Minimum)
M1 (Minimum)
C4 (Minimum)
Rating
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 οhm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 880 MHz,
1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Common–Source Amplifier Power Gain (Pout = 23 dBm)
Gps
29
Power Added Efficiency (Pout = 34 dBm)
η
—
Input Return Loss (Pout = 23 dBm)
IRL
—
Adjacent Channel Power Ratio (Pout = 23 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
Adjacent Channel Power Ratio (Pout = 34 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz)
GF
—
Bias Sense FET Drain Current
VBSD = 27 V
VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA
IBSD
0.8
31
—
dB
21
—
%
–12
–9
dB
–60
–55
dBc
–50
—
dBc
0.2
0.4
dB
1.2
1.6
mA
(continued)
MHVIC915R2
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
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