BS170 データシートの表示（PDF） - Philips Electronics

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BS170

N-channel vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel vertical D-MOS transistor

Product specification

BS170

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in TO-92

variant envelope and intended for use

in relay, high-speed and

line-transformer drivers.

FEATURES

• Very low RDS(on).

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching.

• No secondary breakdown.

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage

Drain current (DC)

Total power dissipation up to Tamb = 25 °C

Junction temperature

Drain-source ON-resistance

VGS = 10 V; ID = 200 mA

VDS

max.

VGS

max.

ID

max.

Ptot

max.

Tj

max.

RDS(on) max.

60 V

15 V

500 mA

830 mW

150 °C

5Ω

PINNING - TO-92 VARIANT

1 = source

2 = gate

3 = drain

PIN CONFIGURATION

handbook, halfpage

1

2

3

d

g

MAM146

s

Note: Various pin configurations available.

Fig.1 Simplified outline and symbol.

April 1995

2

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