MICRF005
Absolute Maximum Ratings (Note 1)
Supply Voltage (VDDRF, VDDBB) .................................... +7V
Reference Oscillator Input Voltage (VREFOSC) .......... VDDBB
Input/Output Voltage (VI/O) ................. VSS–0.3 to VDD+0.3
Junction Temperature (TJ) ...................................... +150°C
Storage Temperature Range (TS) ............ –65°C to +150°C
Lead Temperature (soldering, 10 sec.) ................... +260°C
ESD Rating, Note 3
Micrel
Operating Ratings (Note 2)
Supply Voltage (VDDRF, VDDBB) ................ +4.75V to +5.5V
Ambient Temperature (TA) ......................... –40°C to +85°C
Electrical Characteristics
VDDRF = VDDBB = VDD where 4.75V ≤ VDD ≤ 5.5V, VSS = 0V; VT/R = VSHUT = 0V; CAGC = 0.47µF, CTH = 4.7nF, 115kbps data-rate (Manchester
encoded); fREFOSC = 14.3359MHz (fRF = 915MHz); TA = 25°C, bold values indicate –40°C ≤ TA ≤ +85°C; current flow into device pins is positive; unless
noted.
Symbol
Parameter
Condition
Min Typ Max Units
IOP
Operating Current
continuous operation
10 13.5 mA
18.5
10:1 duty cycle
1
mA
ISTBY
Standby Current
RF Section, IF Section
VT/R = VSHUT = VDD
11
µA
Receiver Sensitivity
Notes 4, 6
–81 –84
dBm
fIF
IF Center Frequency
Note 7
fBW
IF 3dB Bandwidth
Notes 7
Maximum Receive Data Rate
2.496
1.2
115
MHz
MHz
kb/s
fANT
RF Input Range
Receive Modulation Duty-Cycle
800
1000 MHz
20
80
%
Maximum Receiver Input
Spurious Reverse Isolation
AGC Attack to Decay Ratio
AGC Leakage Current
Reference Oscillator
RS = 50Ω
ANT pin, RSC = 50Ω, Note 5
tATTACK ÷ tDECAY, Note 9
TA = +85°C, VSHUT = VDD or VT/R = VDD, Note 9
–10
30
0.1
±200
dBm
µVrms
nA
Synthesizer Stabilization Time
to 1% of final value
1.2
ms
ZREFOSC
Reference Oscillator
Input Impedance
300
kΩ
OSC Input Voltage
300
mVp-p
Demodulator
ZCTH
∆ZCTH
CTH Source Impedance
CTH Source Impedance Variation
Demodulator Filter Bandwidth
Note 8, 9
Note 9
Notes 7
26
kΩ
±15
%
300
kHz
October 2001
3
MICRF005