OM100L60CMIS データシートの表示（PDF） - Omnirel Corp => IRF

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OM100L60CMIS

CERMOD™ HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT’S

Omnirel Corp => IRF 

OM75L60CMIS

ELECTRICAL CHARACTERISTICS (Tc= 25°C unless otherwise specified)

Characteristic

OFF CHARACTERISTICS

Collector Emitter Breakdown VoClEt=a0gVe, V

Zero Gate Voltage Collector CGuEr=r0e,ntCV,E V=600V

Gate Emitter Leakage CurrGeEn=t+,/-V15V,CEV=0V

ON CHARACTERISTICS

Gate Threshold VoltaCgEe=,VGVE, IC =6mA

Collector Emitter Saturation GVEo=l1t5aVg,e,ICV=75A

Symbol

V CES

ICES

IGES

V GE(TH)

V CE(SAT)

Min. Typ. Max

600

25

2

4.5 5.8 6.5

2.5 2.9

Unit

V

µA

µA

V

V

DYNAMIC CHARACTERISTICS

Fwd. Transconductance

Input Capacitance

Output Capacitance

Rev. Transfer Capacitance

VCE =5V, CI=75A

VGE =0

VCE =25V

f=1.0MHz

gfs

C IES

C OES

C RES

36

S

3.7

nF

1.1

nF

1.9

nF

SWITCHING INDUCTIVE LOAD CHARACTERISTICS

Turn-On Delay Time

t(on)

60

nS

Rise Time

VCC = 300V,C =I75A

tr

65

nS

Turn-on Losses

VGE =+15/-10V,G =R10Ω

Eon

mJ

Turn-off Delay Time

L=100µH,Tj=12°5C

td(off)

90

nS

Fall Time

tf

80

nS

Turn-off Losses

Eoff

mJ

DIODE CHARACTERISTICS

Maximum Forward Voltage

IF=75A, Tj=2°C5

Tj=125°C

VR =300V, Tj=2°C5

Reverse Recovery

IF=75A, Tj=12°C5

Characteristics

dI/dt=-1200µAS/Tj=2°5C

Tj=125°C

Tj=25°C

Tj=125°C

VF

Qrr

Irr

trr

1.4 2.0 V

4

µC

6.5

40

A

85

nS

THERMAL AND MECHANICAL CHARACTERISTICS

Thermal Resistance, Junction to Case (Per IGBT)R thJC

Thermal Resistance, Junction to Case (Per DiodeR)thJC

Maximum Junction Temperature

TjMAX

Isolation Voltage

Screw Torque

VisRMS

-Mounting

Module Weight

-

0.45 °C/W

0.8 °C/W

150 °C

-

V

15 20 inl-b

250

Grams

Rev.02

4/22/99

Omnirel LLC 205 Crawford Street,

www.omnirel.com(978) 534-5776 FAX (978) 537-4246

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