MJD350G(2005) データシートの表示（PDF） - ON Semiconductor

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MJD350G
(Rev.:2005)

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

ON Semiconductor 

MJD340 (NPN) MJD350 (PNP)

MJD350

200

1

TJ = 150°C

100

25°C

70

−55 °C

50

30

20

VCE = 2 V

VCC = 10 V

10

5 7 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

MJD350

1

TJ = 25°C

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE @ VCE = 10 V

0.4

IC/IB = 10

0.2

0

5

VCE(sat)

7 10

20 30 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

IC/IB = 5

200 300 500

1

0.7 D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.01

0.05

0.03 SINGLE PULSE

0.02

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1

2 3 5 10 20 30 50 100 200 300 500 1 k

t, TIME (ms)

Figure 5. Thermal Response

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