MJD350T4G(2005) データシートの表示（PDF） - ON Semiconductor
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MJD350T4G Datasheet PDF : 5 Pages
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MJD340 (NPN) MJD350 (PNP)
1000
500
100 ms
300
500 ms
200
1 ms
100
50
30
dc
20
10
5
3
2
1
10
20 30 50 70 100 200 300 500 700 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
TA TC
2.5 25
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2 20
1.5 15
1 10
TA
TC
0.5 5
00
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 7. Power Derating
ORDERING INFORMATION
Device
Package
Shipping†
MJD340
MJD340G
DPAK
DPAK
(Pb−Free)
75 Units / Rail
MJD340RL
MJD340RLG
DPAK
DPAK
(Pb−Free)
1800 / Tape & Reel
MJD340T4
MJD340T4G
DPAK
DPAK
(Pb−Free)
2500 / Tape & Reel
MJD350
MJD350G
DPAK
DPAK
(Pb−Free)
75 Units / Rail
MJD350T4
MJD350T4G
DPAK
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
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