MJD350G(2005) データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

MJD350G
(Rev.:2005)

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

ON Semiconductor 

MJD340 (NPN) MJD350 (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1 mAdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 300 Vdc, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current

(VBE = 3 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mAdc, VCE = 10 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Symbol

Min

Max

Unit

VCEO(sus)

300

−

Vdc

ICEO

−

0.1 mAdc

IEBO

−

0.1 mAdc

hFE

30

240

−

300

200

TJ = 150°C

100

70

+100°C

50

+25 °C

30

20

−55 °C

TYPICAL CHARACTERISTICS

MJD340

10

1

2

3

5

7 10

20

30

50 70 100

IC, COLLECTOR CURRENT (mAdc)

Figure 1. DC Current Gain

VCE = 2 V

VCE = 10 V

200 300

500

1

TJ = 25°C

0.8

0.6

MJD340

VBE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

0.4

VCE(sat) @ IC/IB = 10

0.2

IC/IB = 5

0

10

20 30

50

100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltages

http://onsemi.com

2

Share Link: