MJE15032 データシートの表示（PDF） - ON Semiconductor
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MJE15032 Datasheet PDF : 6 Pages
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MJE15032 (NPN),
MJE15033 (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
Features
• DC Current Gain Specified to 5.0 Amperes
hFE = 70 (Min) @ IC = 0.5 Adc
= 10 (Min) @ IC = 2.0 Adc
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO−220AB Compact Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model C
Human Body Model 3B
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
− Peak
Symbol
VCEO
VCB
VEB
IC
Value
250
250
5.0
8.0
16
Unit
Vdc
Vdc
Vdc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
IB
PD
PD
TJ, Tstg
2.0
50
0.40
2.0
0.016
– 65 to
+ 150
Adc
W
W/_C
W
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance,
Junction−to−Case
Symbol
RqJC
Max
2.5
Unit
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction−to−Ambient
RqJA
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 3
http://onsemi.com
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
A YW
MJE1503xG
AKA
1
23
MJE1503x = Specific Device Code
x
= 2 or 3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Package
ORDERING INFORMATION
Device
Package
Shipping†
MJE15032
TO−220
50 Units/Rail
MJE15032G
TO−220
(Pb−Free)
50 Units/Rail
MJE15033
TO−220
50 Units/Rail
MJE15033G
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE15032/D
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