MMBF5484LT1(2001) データシートの表示（PDF） - ON Semiconductor
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MMBF5484LT1 Datasheet PDF : 8 Pages
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ON Semiconductort
JFET Transistor
N–Channel
MMBF5484LT1
ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
Storage Channel Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF5484LT1 = 6B
Symbol
VDG
VGS(r)
IG(f)
PD
Tstg
Symbol
PD
RqJA
TJ, Tstg
Value
25
25
10
200
2.8
–65 to +150
Max
225
1.8
556
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
1. FR–5 = 1.0 0.75 0.062 in.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
Unit
mW
mW/°C
°C/W
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
|Yfs|
|yos|
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
Min
–25
—
—
–0.3
Max
—
–1.0
–0.2
–3.0
Unit
Vdc
nAdc
µAdc
Vdc
1.0
5.0
mAdc
3000
—
6000
50
µmhos
µmhos
Publication Order Number:
MMBF5484LT1/D
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