MMBFJ177LT1G(2009) データシートの表示（PDF） - ON Semiconductor
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MMBFJ177LT1G Datasheet PDF : 3 Pages
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MMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Gate Voltage
VDG
25
Vdc
Reverse Gate−Source Voltage
VGS(r)
−25
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 0.75 0.062 in.
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
TJ, Tstg −55 to +150 °C
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
MARKING DIAGRAM
6Y MG
G
1
6Y = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBFJ177LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 4
Publication Order Number:
MMBFJ177LT1/D
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