MMBT4355 データシートの表示（PDF） - Fairchild Semiconductor

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MMBT4355

PNP General Purpose Amplifier

Fairchild Semiconductor 

PNP General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

Collector-Emitter Sustaining

Voltage*

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Cutoff Current

Emitter-Cutoff Current

IC = 1.0 mA, IB = 0

IC = 10 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 50 V, IE = 0

VEB = 5.0 V, VCE = 0

VEB = 4.0 V, IC = 0

60

V

60

V

5.0

V

50

nA

10

µA

100

nA

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 100 µA, VCE = 10 V

IC = 1.0mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 100 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

IC = 1.0 A, IB = 100 mA

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

IC = 1.0 A, IB = 100 mA

IC = 500 mA, VCE = 0.5 V

IC = 1.0 A, VCE = 1.0 V

60

75

100

400

75

75

0.15

V

0.50

V

1.0

V

0.9

V

1.1

V

1.2

V

1.1

V

1.2

V

SMALL SIGNAL CHARACTERISTICS

Cobo

Cibo

hfe

NF

Output Capacitance

Input Capacitance

Small-Signal Current Gain

Noise Figure

VCB = 10 V, IE = 0, f = 1.0 MHz

30

pF

VEB = 0.5 V, IC = 0, f = 1.0 MHz

110

pF

IC = 50 mA, VCE = 10 V,

f = 100 MHz

1.0

5.0

IC = 100 µA, VCE = 10 V,

RS = 1.0 kΩ, f = 1.0 kHz,

BW = 1.0 Hz

1.0

3.0

dB

SWITCHING CHARACTERISTICS

ton

Turn-On Time

toff

Turn-Off Time

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

IC = 500 mA, VCC = 500 mA

IB1 = IB2 = 50 mA

100

ns

400

ns

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