MMBT3906W データシートの表示（PDF） - TY Semiconductor

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コンポーネント説明

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MMBT3906W

General Purpose Transistor

TY Semiconductor 

Product specification

MMBT3906W

Electrical Characteristics Ta = 25

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Base cutoff current

Collector cutoff current

DC current gain *

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Current-gain-bandwidth product

Output capacitance

Input capacitance

Input impedance

Voltage feedback ratio

Small-signal current gain

Output admittance

Noise figure

Delay time

Rise time

Storage time

Fall time

Symbol

Testconditons

Min Typ Max Unit

V(BR)CEO IC = -1.0 mA, IB = 0

-40

V

V(BR)CBO IC = -10 ìA, IE = 0

-40

V

V(BR)EBO IE = -10 ìA, IC = 0

-5

V

IBL VCE = -30 V, VEB = -3.0 V

-50 nA

ICEX VCE = -30 V, VEB = -3.0 V

-50 nA

IC = -0.1 mA, VCE = -1.0 V

IC = -1.0 mA, VCE = -1.0 V

HFE IC = -10 mA, VCE = -1.0 V

IC = -50 mA, VCE = -1.0 V

IC = -100 mA, VCE = -1.0 V

60

80

100

300

60

30

IC = -10 mA, IB = -1.0 mA

VCE(sat)

IC = -50 mA, IB = -5.0 mA

IC = -10 mA, IB = -1.0 mA

VBE(sat)

IC = -50 mA, IB = -5.0 mA

-0.65

-0.25

-0.4

V

-0.85

-0.95

fT

IC = -10 mA, VCE = -20 V, f = 100 MHz 250

MHz

Cobo VCB = -5.0 V, IE = 0, f = 1.0 MHz

4.5 pF

Cibo VEB = -0.5 V, IC = 0, f = 1.0 MHz

10 pF

hie VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz

2.0

hre VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz

0.1

hfe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 100

12 kÙ

10 X10-4

400

hoe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz

3.0

NF

VCE = -5.0 V, IC = -100 ìA, RS = 1.0 kÙ,

f = 1.0 kHz

td

VCC = -3.0 V, VBE = 0.5 V

60 ìmhos

4.0 dB

35 ns

tr

IC = -10 mA, IB1 = -1.0 mA

35 ns

ts

VCC = -3.0 V, IC = -10 mA

225 ns

tf

IB1 = IB2 = -1.0 mA

75 ns

* Pulse test: pulse width 300 ìs, duty cycle 2.0%.

Marking

Marking

2A

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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