MMBTA44/45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MMBTA44
MMBTA45
VCBO
500
V
400
V
Collector-Emitter Voltage
MMBTA44
MMBTA45
VCEO
400
V
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Power Dissipation
Ta=25°C
TC=25°C
PD
350
mW
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown MMBTA44
Voltage
MMBTA45
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
Emitter-Base Breakdown Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Collector Cut-off Current
MMBTA44
MMBTA45
Collector Cut-off Current
MMBTA44
MMBTA45
Emitter Cut-off Current
DC Current Gain (Note)
VBE(SAT)
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note: Pulse test: PW<300μs, Duty Cycle<2%
TEST CONDITIONS
IC=100μA, IB=0
IC =1mA, IB=0
IE=100μA, IC =0
IC =1mA, IB=0.1mA
IC =10mA, IB=1mA
IC =50mA, IB=5mA
IC 10mA, IB=1mA
VCB=400V, IE =0
VCB=320V, IE =0
VCE =400V, IB=0
VCE =320V, IB=0
VEB=4V, IC =0
VCE =10V, IC =1mA
VCE =10V, IC =10mA
VCE =10V, IC =50mA
VCE =10V, IC =100mA
VCE =20V, IC =10mA
f=100MHz
VCB=20V, IE =0, f=1MHz
MIN TYP MAX UNIT
500
V
400
V
400
V
350
V
6
V
0.4
V
0.5
V
0.75 V
0.75 V
0.1 μA
0.1 μA
0.5 μA
0.5 μA
0.1 μA
40
50
240
45
40
50
MHz
7
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-007.E