VP2206 データシートの表示（PDF） - Supertex Inc

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VP2206

P-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc 

Typical Performance Curves

BVDSS Variation with Temperature

1.1

VP2206

On-Resistance vs. Drain Current

5

4

VGS = -5V

1.0

0.9

-50

0

50

100

150

Tj (°C)

Transfer Characteristics

-10

VDS = -25V

-8

TA = -55°C

-6

25°C

3

2

VGS = -10V

1

0

0

-2

-4

-6

-8

-10

ID (amperes)

V(th) and RDS Variation with Temperature

1.2

2.0

RDS(ON) @ -10V, -3.5A

1.1

1.6

1.0

1.2

-4

0.9

125°C

0.8

V(th)@ -1mA

-2

0.8

0.4

0

0

-2

-4

-6

-8

-10

VGS (volts)

Capacitance vs. Drain-to-Source Voltage

400

f = 1MHz

CISS

300

200

100

0

0

COSS

CRSS

-10

-20

-30

-40

VDS (volts)

0.7

-50

0

0

50

100

150

Tj (°C)

Gate Drive Dynamic Characteristics

-10

-8

VDS = -10V

-6

VDS = -40V

725 pF

-4

-2

310 pF

0

0

2

4

6

8

10

QG (nanocoulombs)

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

4

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

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