MPS6724RLRA データシートの表示（PDF） - ON Semiconductor

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MPS6724RLRA

One Watt Darlington Transistors

ON Semiconductor 

MPS6724, MPS6725

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

MPS6724

MPS6725

Collector −Base Breakdown Voltage

(IC = 1.0 mAdc, IE = 0)

MPS6724

MPS6725

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 40 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

MPS6724

MPS6725

DC Current Gain

(IC = 200 mAdc, VCE = 5.0 Vdc)

(IC = 1000 mAdc, VCE = 5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 1000 mAdc, IB = 2.0 mAdc)

Base −Emitter On Voltage

(IC = 1000 mAdc, VCE = 5.0 Vdc)

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

Collector−Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Symbol

V(BR)CES

V(BR)CBO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

fT

Ccb

Min

Max

40

−

50

−

50

−

60

−

12

−

−

100

−

100

−

100

25,000

4,000

−

−

40,000

1.5

−

2.0

100

1000

−

10

Unit

Vdc

Vdc

Vdc

nAdc

nAdc

−

Vdc

Vdc

MHz

pF

TYPICAL CHARACTERISTICS

CURRENT LIMIT

DUTY CYCLE ≤ 10%

3.0 k

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

2.0 k

100 ms

1.0 ms

1.0 k

1.0 s

500

TA = 25°C

TC = 25°C

200

1.5 2.0

5.0

10

20 30

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region — Safe Operating Area

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