MPSH34 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
MPSH34 Datasheet PDF : 3 Pages
| |||
MPSH34
NPN General Purpose Amplifier
• This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100mA to 20mA range to 300MHz, and low
frequency drift common-base VHF oscillator
applications with high output levels for driving FET
mixers.
• Sourced from process 47.
• See MPSH11 for characteristics.
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
1
TO-92
1. Base 2. Emitter 3. Collector
Value
40
40
4.0
50
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
On Characteristics
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = 2.0V, IC = 20mA
VCE = 15V, IC = 7.0mA
IC = 7.0mA, IB = 2.0mA
VCE = 15V, IC = 7.0mA
fT
Current Gain Bandwidth Product
IC =15mA, VCE = 15V,
f = 100MHz
Ccb
Collector-Base Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCB = 10V, IE = 0, f = 1.0MHz
Min. Max. Units
40
V
40
4.0
VV
50
nA
15
40
0.5
V
0.95
V
500
MHz
0.32
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
Share Link: 