MRF1001 データシートの表示（PDF） - Microsemi Corporation

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MRF1001

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,

•

G

U max

= 11.5 dB (typ) @ 300 MHz, 14v, 90mA

• |S21|2 = 11 dB (typ) @ 300 MHz, 14v, 90mA

MRF1001A

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

Value

20

30

3.5

200

1.0

5.71

Unit

Vdc

Vdc

Vdc

mA

Watts

mW/ ºC

MSC1311.PDF 10-25-99

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