MRF1001 データシートの表示（PDF） - Microsemi Corporation
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MRF1001 Datasheet PDF : 4 Pages
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVEBO
BVCBO
ICBO
VCE(sat)
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc)
Emitter-Base Breakdown Voltage
(IC= 0.1 mAdc)
Collector-Base Breakdown Voltage
(IC=1.0 mAdc)
Collector-Base
(VCB = 10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 50mA, IC/IB = 10)
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
Test Conditions
fT
Current-Gain - Bandwidth Product
(IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz)
MRF1001A
Min.
20
3.5
30
-
-
Value
Typ.
-
-
-
50
100
Max.
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
µA
mV
50
-
300
-
Min.
-
Value
Typ.
3.0
Max.
-
Unit
GHz
MSC1311.PDF 10-25-99
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