MRF1001 データシートの表示（PDF） - Microsemi Corporation

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MRF1001

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

MRF1001A

FUNCTIONAL

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

G

U max

Maximum Unilateral Gain (1) IC = 90 mAdc, VCE = 14Vdc,

f = 300 MHz

-

11.5

-

dB

MAG

Maximum Available Gain

IC = 90 mAdc, VCE = 14Vdc,

f = 300 MHz

-

11.7

-

dB

|S21|2

Insertion Gain

IC = 90 mAdc, VCE = 14Vdc,

f = 300 MHz

10

11.13

-

dB

Table 1. Common Emitter S-Parameters, @ VCE = 14 V, IC = 90 mA

f

(MHz)

100

200

300

400

500

600

700

800

900

1000

S11

|S11|

∠φ

.165

-17

.113

-77

.061

63

.003

-49

.063

117

.069

140

.135

150

.179

144

.282

146

.362

132

S21

|S21|

∠φ

9.7

98

5.2

80

3.6

76

2.7

66

2.3

57

1.9

54

1.9

48

1.7

39

1.6

33

1.5

36

S12

|S12|

∠φ

.058

79

.115

73

.169

76

.225

68

.281

61

.320

60

.397

58

.447

49

.476

44

.510

47

S22

|S22|

.411

.302

.298

.287

.235

.245

.232

.237

.215

.220

∠φ

-32

-36

-42

-67

-80

-90

-104

-124

-157

-177

MSC1311.PDF 10-25-99

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