MRF166 データシートの表示（PDF） - Motorola => Freescale

部品番号

コンポーネント説明

メーカー

MRF166

N-CHANNEL MOS LINEAR RF POWER FET

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0 V)

V(BR)DSS

IDSS

IGSS

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

VGS(th)

gfs

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Ciss

Coss

Crss

FUNCTIONAL CHARACTERISTICS

Noise Figure

NF

(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)

MRF166C

Common Source Power Gain

Gps

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

Drain Efficiency

η

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

Electrical Ruggedness

ψ

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,

Load VSWR 30:1 at All Phase Angles)

MRF166

Common Source Power Gain

Gps

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Drain Efficiency

η

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Electrical Ruggedness

ψ

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA,

Load VSWR 30:1 at All Phase Angles)

Series Equivalent Input Impedance

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Series Equivalent Output Impedance

(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)

Zin

Zout

Min

Typ

Max

Unit

65

—

—

V

—

—

1.0

mA

—

—

1.0

µA

1.0

3.0

6.0

V

600

800

—

mhos

—

30

—

pF

—

35

—

pF

—

4.5

—

pF

—

2.5

—

dB

14

17

—

dB

50

55

—

%

No Degradation in Output Power

15

19

—

dB

55

65

—

%

No Degradation in Output Power

—

3.99 – j12.2

—

—

14.15 – j6.51

—

Ohms

Ohms

MRF166 MRF166C

2

MOTOROLA RF DEVICE DATA

Share Link: