ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Crss
Gps
Two–Tone Drain Efficiency
η
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
IMD
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
IRL
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Pout, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
P1dB
Ψ
(1) Part is internally matched both on input and output.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
6
µAdc
—
—
1
µAdc
2
—
4
Vdc
2.5
3.9
4.5
Vdc
—
0.27
—
Vdc
—
4.7
—
S
—
2.7
—
pF
11
12.5
—
dB
31
34
—
%
—
–30
–28
dBc
—
–12
—
dB
—
60
—
W
No Degradation In Output Power
Before and After Test
MRF21060 MRF21060R3 MRF21060SR3
2
MOTOROLA RF DEVICE DATA