MRF21090SR3 データシートの表示（PDF） - Motorola => Freescale
部品番号
コンポーネント説明
メーカー
MRF21090SR3 Datasheet PDF : 8 Pages
| |||
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21090/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors MRF21090R3
N - Channel Enhancement - Mode Lateral MOSFETs MRF21090SR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
• Typical W - CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — - 45 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF21090R3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465C - 02, STYLE 1
NI - 880S
MRF21090SR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, - 0.5
270
1.54
- 65 to +150
200
Value
0.65
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MRF21090R3 MRF21090SR3
1
Share Link: 