MRF342 データシートの表示（PDF） - Advanced Semiconductor

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MRF342

SILICON POWER NPN TRANSISTOR

Advanced Semiconductor 

MRF342

SILICON POWER NPN TRANSISTOR

DESCRIPTION:

The ASI MRF342 is designed for

VHF amplifier applications operating to

150 MHz.

PACKAGE STYLE TO-220AB

MAXIMUM RATINGS

IC

3.0 A

VCEO

35 V

VCBO

65 V

VEBO

4.0 V

PDISS

55 W @ TC = 25 °C

TJ

-55 °C to +150 °C

TSTG

-55 °C to +150 °C

θJC

3.2 °C/W

1 = Base 2 = Emitter 3 = Collector

4 = Emitter

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM

BVCEO

IC = 20 mA

35

BVCES

IC = 20 mA

65

BVCBO

IC = 20 mA

65

BVEBO

IE = 2.0 mA

4.0

ICES

VCE = 27 V

hFE

VCE = 5.0 V

IC = 1.0 A

10

COB

VCB = 27 V

f = 1.0 MHz

GPE

VCC = 13.5 V POUT = 6.0 W f = 136 MHz

10

GPE

ηC

11

VCC = 27 V

POUT = 24 W f = 136 MHz

50

TRANS1.SYM

TYPICAL MAXIMUM

2.0

100

20

30

11.5

12.3

60

UNITS

V

V

V

V

mA

---

pF

dB

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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