MSM56V16800E データシートの表示（PDF） - Oki Electric Industry

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MSM56V16800E

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

E2G1053-18-54

¡ ¡ SemicondSucetormiconductor

MSM56V16800E

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2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated

in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 2-bank ¥ 1,048,576-word ¥ 8-bit configuration

• 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

– CAS latency (1, 2, 3)

– Burst length (1, 2, 4, 8, full page)

– Data scramble (sequential, interleave)

• CBR auto-refresh, Self-refresh capability

• Package:

44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM56V16800E-8

MSM56V16800E-10

Max.

Frequency

125 MHz

100 MHz

Access Time (Max.)

tAC1

tAC2

tAC3

22 ns 10 ns 6 ns

27 ns 9 ns 9 ns

1/30

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