MSM56V16800E データシートの表示（PDF） - Oki Electric Industry

部品番号

コンポーネント説明

メーカー

MSM56V16800E

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

¡ Semiconductor

MSM56V16800E

PIN DESCRIPTION

CLK

CS

CKE

Address

A11

RAS

CAS

WE

DQM

DQi

Fetches all inputs at the "H" edge.

Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE and DQM.

Masks system clock to deactivate the subsequent CLK operation.

If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is

deactivated. CKE should be asserted at least one cycle prior to a new command.

Row & column multiplexed.

Row address: RA0 – RA10

Column address: CA0 – CA8

Selects bank to be activated during row address latch time and selects bank for precharge and read/

write during column address latch time. A11 = "L" : Bank A, A11 = "H" : Bank B

Functionality depends on the combination. For details, see the function truth table.

Masks the read data of two clocks later when DQM is set "H" at the "H" edge of the clock signal.

Masks the write data of the same clock when DQM is set "H" at the "H" edge of the clock signal.

Data inputs/outputs are multiplexed on the same pin.

3/30

Share Link: