AT28LV64B データシートの表示（PDF） - Atmel Corporation
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AT28LV64B
Atmel Corporation
AT28LV64B Datasheet PDF : 12 Pages
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Features
• Single 3.3V ± 10% Supply
• Hardware and Software Data Protection
• Low-power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Fast Read Access Time - 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
• DATA Polling for End of Write Detection
• High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
(continued)
Pin Configurations
Pin Name Function
PDIP, SOIC
Top View
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O0 11
I/O1 12
I/O2 13
GND 14
28 VCC
27 WE
26 NC
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
PLCC
Top View
TSOP
Top View
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
OE 1
A11 2
A9 3
A8 4
NC 5
WE 6
VCC 7
NC 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
64K (8K x 8)
Low-voltage
Parallel EEPROM
with Page Write
and Software
Data Protection
AT28LV64B
3-Volt, 64K
E2PROM with
Data Protection
Rev. 1683AX–07/00
1
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