MT28F322P3 データシートの表示（PDF） - Micron Technology

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MT28F322P3

FLASH MEMORY

Micron Technology 

GENERAL DESCRIPTION

The MT28F322P3 is a high-performance, high-

density, nonvolatile memory solution that can

significantly improve system performance. This new

architecture features a two-memory-bank configura-

tion that supports background operation with no

latency.

A high-performance bus interface allows a fast page

mode data transfer; a conventional asynchronous bus

interface is provided as well.

The MT28F322P3 allows soft protection for blocks,

as read only, by configuring soft protection registers

with dedicated command sequences. For security pur-

poses, two 64-bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE

functions are fully automated by an on-chip write state

machine (WSM). Two on-chip status registers, one for

each of the two memory partitions, can be used to moni-

tor the WSM status and to determine the progress of

the program/erase task.

The erase/program suspend functionality allows

compatibility with existing EEPROM emulation soft-

ware packages.

The device is manufactured using 0.18µm process

technology.

Please refer to Micron’s Web site (www.micron.com/

flash) for the latest data sheet.

PRELIMINARY

2 MEG x 16

ASYNC/PAGE FLASH MEMORY

ARCHITECTURE AND MEMORY

ORGANIZATION

The MT28F322P3 Flash device contains two sepa-

rate banks of memory (bank a and bank b) for simulta-

neous READ and WRITE operations.

The MT28F322P3 Flash memory is available in the

following bank segmentation configuration:

• Bank a comprises one-fourth of the memory

and contains 8 x 4K-word parameter blocks

and 15 x 32K-word blocks.

• Bank b represents three-fourths of the

memory, is equally sectored, and contains

48 x 32K-word blocks.

Figures 2 and 3 show the bottom and top memory

organizations.

DEVICE MARKING

Due to the size of the package, Micron’s standard

part number is not printed on the top of each device.

Instead, an abbreviated device mark comprised of a

five-digit alphanumeric code is used. The abbreviated

device marks are cross referenced to Micron part num-

bers in Table 1.

Table 1

Cross Reference for Abbreviated Device Marks

PART NUMBER

MT28F322P3FJ-70 BET

MT28F322P3FJ-70 TET

MT28F322P3FJ-80 BET

MT28F322P3FJ-80 TET

PRODUCT

MARKING

FW816

FW817

FW814

FW815

SAMPLE

MARKING

FX816

FX817

FX814

FX815

MECHANICAL

SAMPLE MARKING

FY816

FY817

FY814

FY815

2 Meg x 16 Async/Page Flash Memory

MT28F322P3FJ_3.p65 – Rev. 3, Pub. 7/02

2

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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