MT46V16M16 データシートの表示（PDF） - Micron Technology

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MT46V16M16

256Mb: x4, x8, x16 DDR333 SDRAM Addendum

Micron Technology 

PRELIMINARY

256Mb: x4, x8, x16

DDR333 SDRAM Addendum

PIN DESCRIPTIONS (continued)

BALL / PIN NUMBERS

FBGA

TSOP SYMBOL

TYPE DESCRIPTION

A8, B9, B7

C9, C7, D9

D7, E9, E1

D3, D1, C3

C1, B3, B1,

A2

2, 4, 5,

7, 8, 10

11, 13, 54

56, 57, 59

60, 62, 63,

65

DQ0-2

DQ3-5

DQ6-8

DQ9-11

DQ12-14

DQ15

I/O Data Input/Output: Data bus for x16

A8, B7, C7,

D7, D3, C3,

B3, A2

2, 5, 8,

11, 56, 59

62, 65

DQ0-2

DQ3-5

DQ6-7

I/O Data Input/Output: Data bus for x8

B7, D7, D3, 5, 11, 56

B3

62

DQ0-2

DQ2

I/O Data Input/Output: Data bus for x4

E3

E7, E3

51

DQS

I/O

16, 51 LDQS, UDQS

Data Strobe: Output with read data, input with write data. DQS is

edge-aligned with read data, centered in write data. It is used to

capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS

IS DQS for DQ8-DQ15. Pin 16 (H7) is NC on x4 and x8.

14, 17, 25,

NC

43, 53

-

No Connect: These pins should be left unconnected.

19, 50

DNU

– Do Not Use: Must float to minimize noise on Vref

B2, D2, C8, 3, 9, 15, 55,

E8, A9

61

VDDQ

Supply DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved

noise immunity.

A1, C2, E2, 6, 12, 52,

B8, D8

58, 64

VSSQ Supply DQ Ground. Isolated on the die for improved noise immunity.

F8, M7, A7 1, 18, 33

VDD

Supply Power Supply: +2.5V ±0.2V.

A1, A3, F2, 34, 48, 66

VSS

Supply Ground.

M3

F1

49

VREF

Supply SSTL_2 reference voltage.

F9

17

A13

I

Address input A13 for 1Gb devices.

256Mb: x4, x8, x16 DDR333 SDRAM

256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01

5

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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