MT54W1MH36B データシートの表示（PDF） - Micron Technology

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MT54W1MH36B

36Mb QDR™II SRAM 2-WORD BURST

Micron Technology 

ADVANCE

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36

1.8V VDD, HSTL, QDRIIb2 SRAM

GENERAL DESCRIPTION (continued)

Since data can be transferred into and out of the

device on every rising edge of both clocks (K and K#, C

and C#), memory bandwidth is maximized while sys-

tem design is simplified by eliminating bus turn-

arounds.

Depth expansion is accomplished with port selects

for each port (read R#, write W#), which are received at

K rising edge. Port selects permit independent port

operation.

All synchronous inputs pass through registers con-

trolled by the K or K# input clock rising edges. Active

LOW byte writes (BWx#) permit byte or nibble write

selection. Write data and byte writes are registered on

the rising edges of both K and K#. The addressing

within each burst of two is fixed and sequential, begin-

ning with the lowest and ending with the highest

address. All synchronous data outputs pass through

output registers controlled by the rising edges of the

output clocks (C and C# if provided, otherwise K and

K#).

Four balls are used to implement JTAG test capabili-

ties: test mode select (TMS), test data-in (TDI), test

clock (TCK), and test data-out (TDO). JTAG circuitry is

used to serially shift data to and from the SRAM. JTAG

inputs use JEDEC-standard 1.8V I/O levels to shift data

during this testing mode of operation.

The SRAM operates from a +1.8V power supply, and

all inputs and outputs are HSTL-compatible. The

device is ideally suited for applications that benefit

from a high-speed, fully-utilized DDR data bus.

Please refer to Micron’s Web site (www.micron.com/

sramds) for the latest data sheet.

READ/WRITE OPERATIONS

All bus transactions operate on an uninterruptable

burst of two data, requiring one full clock cycle of bus

utilization. The resulting benefit is that short data

transactions can remain in operation on both buses

provided that the address rate can be maintained by

the system (2x the clock frequency).

READ cycles are pipelined. The request is initiated

by asserting R# LOW at K rising edge. Data is delivered

after the rising edge of K# (t + 1) using C and C# as the

output timing references or using K and K#, if C and C#

are tied HIGH. If C and C# are tied HIGH, they may not

be toggled during device operation. Output tri-stating

is automatically controlled such that the bus is

released if no data is being delivered. This permits

banked SRAM systems with no complex OE timing

generation. Back-to-back READ cycles are initiated

every K rising edge.

Figure 2

Functional Block Diagram: 2 Meg x 18

n

ADDRESS

R#

W#

K

K#

n

ADDRESS

REGISTRY

& LOGIC

W#

BW0#

BW1#

18

D (Data In)

R#

K

K#

DATA

REGISTRY

& LOGIC

36

K

WR

RE

IG

T

E2

WD

RR

II

TV

EE

S

2n x 36

EA

MEMORY N M

ARRAY

SP

ES

36

MUX

R

E

G

O

U

T

P

36

A

U

T

O

U

T

P

U

T

S

E

L

E

C

T

O

U

T

P

U

T

B

U

F

F

E

R

18

Q

(Data Out)

2

R

C

C, C#

or

CQ, CQ#

(Echo Clock Out)

K, K#

NOTE:

1. The functional block diagram illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for

detailed information. The x8, x9, and x36 operations are the same, with apporpriate adjustments of depth and width.

2. n = 20

36Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM

MT54W2MH18B_A.fm - Rev 9/02

2

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology Inc.

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