HN58S65A データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN58S65A

64 k EEPROM (8-kword × 8-bit) Ready/Busy function

Hitachi -> Renesas Electronics 

HN58S65A Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Power supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range *2

VCC

–0.6 to +7.0

V

Vin

–0.5*1 to +7.0*3

V

Topr

0 to +70

˚C

Storage temperature range

Tstg

–55 to +125

˚C

Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns.

2. Including electrical characteristics and data retention.

3. Should not exceed VCC + 1.0 V.

Recommended DC Operating Conditions

Parameter

Symbol

Min

Typ

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

Topr

2.2

3.0

0

0

–0.3*1

—

VCC × 0.7

—

0

—

Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns.

2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.

Max

3.6

0

0.4

VCC + 0.3*2

70

Unit

V

V

V

V

˚C

DC Characteristics (Ta = 0 to + 70˚C, VCC = 2.2 to 3.6 V)

Parameter

Input leakage current

Output leakage current

Standby VCC current

Operating VCC current

Output low voltage

Output high voltage

Symbol Min

I LI

—

I LO

—

I CC1

—

I CC2

—

I CC3

—

—

Typ

—

—

1 to 2

—

—

—

VOL

—

—

VOH

VCC × 0.8 —

Max

2

2

3.5

500

6

12

0.4

—

Unit

µA

µA

µA

µA

mA

mA

V

V

Test conditions

VCC = 5.5 V, Vin = 5.5 V

VCC = 5.5 V, Vout = 5.5/0.4 V

CE = VCC

CE = VIH

Iout = 0 mA, Duty = 100%,

Cycle = 1 µs at VCC = 3.6 V

Iout = 0 mA, Duty = 100%,

Cycle = 150 ns at VCC = 3.6 V

IOL = 1.0 mA

IOH = –100 µA

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