HN58V66AT-10 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN58V66AT-10

64 k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A)

Hitachi -> Renesas Electronics 

HN58V65A Series

HN58V66A Series

64 k EEPROM (8-kword × 8-bit)

Ready/Busy function, RES function (HN58V66A)

ADE-203-539B (Z)

Rev. 2.0

Nov. 1997

Description

The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable

EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption

and high relisbility by employing advanced MNOS memory technology and CMOS process and

circuitry technology. They also have a 64-byte page programming function to make their write

operations faster.

Features

• Single supply: 2.7 to 5.5 V

• Access time:

 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

• Power dissipation:

 Active: 20 mW/MHz (typ)

 Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms (max)

• Automatic page write (64 bytes): 10 ms (max)

• Ready/Busy

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

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