HN58V65AT-10 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN58V65AT-10

64 k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A)

Hitachi -> Renesas Electronics 

HN58V65A Series, HN58V66A Series

AC Characteristics (Ta = 0 to + 70˚C, VCC = 2.7 to 5.5 V)

Test Conditions

• Input pulse levels : 0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 3.0 V (VCC = 3.6 to 5.5 V)

0 V to VCC (RES pin*2)

• Input rise and fall time : ≤ 5 ns

• Input timing reference levels : 0.8, 1.8 V

• Output load : 1TTL Gate +100 pF

• Output reference levels : 1.5 V, 1.5 V

Read Cycle 1 (VCC = 2.7 to 4.5 V)

HN58V65A/HN58V66A

-10

Parameter

Symbol Min

Max

Address to output delay

t ACC

—

100

CE to output delay

t CE

—

100

OE to output delay

t OE

10

50

Address to output hold

t OH

0

—

OE (CE) high to output float*1 tDF

0

40

RES low to output float*1, 2

t DFR

0

350

RES to output delay*2

t RR

0

450

Unit

ns

ns

ns

ns

ns

ns

ns

Test conditions

CE = OE = VIL, WE = VIH

OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = OE= VIL, WE = VIH

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